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2N1486 PDF预览

2N1486

更新时间: 2024-11-30 22:35:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
4页 61K
描述
NPN SILICON MEDIUM POWER TRANSISTOR

2N1486 数据手册

 浏览型号2N1486的Datasheet PDF文件第2页浏览型号2N1486的Datasheet PDF文件第3页浏览型号2N1486的Datasheet PDF文件第4页 
TECHNICAL DATA  
NPN SILICON MEDIUM POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 207  
Devices  
Qualified Level  
JAN  
JANTX  
2N1483  
2N1484  
2N1485  
2N1486  
MAXIMUM RATINGS  
Ratings  
Symbol 2N1483 2N1484 Unit  
2N1485 2N1486  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
55  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
60  
100  
12  
Collector Current -- Continuous  
Total Power Dissipation  
3.0  
@ TA = 250C (1)  
@ TC = 250C (2)  
1.75  
25  
W
W
0C  
PT  
TO-8*  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 0.010 W/0C for TA > 250C  
2) Derate linearly 0.143 W/0C for TC > 250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
V(BR)CEO  
V(BR)CBO  
V(BR)CEX  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
40  
55  
IC = 100 mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Breakdown Voltage  
IC = 100 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Emitter Breakdown Voltage  
VEB = 1.5 Vdc, IC = 0.25 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
VCB = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 12 Vdc  
15  
15  
mAdc  
mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
ICBO  
15  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N1486 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N1486 MICROSEMI

完全替代

NPN SILICON MEDIUM POWER TRANSISTOR
JANTX2N1486 MICROSEMI

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