5秒后页面跳转
2N1483 PDF预览

2N1483

更新时间: 2024-11-30 22:35:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 61K
描述
NPN SILICON MEDIUM POWER TRANSISTOR

2N1483 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
最大集电极电流 (IC):3 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-8JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N1483 数据手册

 浏览型号2N1483的Datasheet PDF文件第2页浏览型号2N1483的Datasheet PDF文件第3页浏览型号2N1483的Datasheet PDF文件第4页 
TECHNICAL DATA  
NPN SILICON MEDIUM POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 207  
Devices  
Qualified Level  
JAN  
JANTX  
2N1483  
2N1484  
2N1485  
2N1486  
MAXIMUM RATINGS  
Ratings  
Symbol 2N1483 2N1484 Unit  
2N1485 2N1486  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
55  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
60  
100  
12  
Collector Current -- Continuous  
Total Power Dissipation  
3.0  
@ TA = 250C (1)  
@ TC = 250C (2)  
1.75  
25  
W
W
0C  
PT  
TO-8*  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 0.010 W/0C for TA > 250C  
2) Derate linearly 0.143 W/0C for TC > 250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
V(BR)CEO  
V(BR)CBO  
V(BR)CEX  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
40  
55  
IC = 100 mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Breakdown Voltage  
IC = 100 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Emitter Breakdown Voltage  
VEB = 1.5 Vdc, IC = 0.25 mAdc  
60  
100  
2N1483, 2N1485  
2N1484, 2N1486  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
VCB = 50 Vdc  
Emitter-Base Cutoff Current  
VEB = 12 Vdc  
15  
15  
mAdc  
mAdc  
2N1483, 2N1485  
2N1484, 2N1486  
ICBO  
15  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N1483 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N1483 MICROSEMI

功能相似

NPN SILICON MEDIUM POWER TRANSISTOR

与2N1483相关器件

型号 品牌 获取价格 描述 数据表
2N1483A ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-8
2N1483E3 MICROSEMI

获取价格

Power Bipolar Transistor
2N1484 NJSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
2N1484 MICROSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
2N1484A ETC

获取价格

TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 3A I(C) | TO-8
2N1485 MICROSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
2N1485 NJSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR
2N1485A ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-8
2N1485E3 MICROSEMI

获取价格

Power Bipolar Transistor
2N1486 MICROSEMI

获取价格

NPN SILICON MEDIUM POWER TRANSISTOR