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2MBI800U4G-170 PDF预览

2MBI800U4G-170

更新时间: 2024-11-18 07:28:07
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 483K
描述
IGBT MODULE

2MBI800U4G-170 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X10针数:10
Reach Compliance Code:unknown风险等级:5.82
外壳连接:ISOLATED最大集电极电流 (IC):800 A
集电极-发射极最大电压:1700 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X10元件数量:2
端子数量:10最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1450 ns标称接通时间 (ton):3100 ns
Base Number Matches:1

2MBI800U4G-170 数据手册

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2MBI800U4G-170  
IGBT MODULE (U series)  
IGBT Modules  
1700V / 800A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
VGES  
Tc=25°C  
Tc=80°C  
Tc=25°C  
Tc=80°C  
1200  
800  
2400  
1600  
800  
Ic  
Continuous  
1ms  
Collector current  
Icp  
A
-Ic  
-Ic pulse  
Pc  
Tj  
1ms  
1 device  
1600  
4800  
150  
Collector power dissipation  
Junction temperature  
Storage temperature  
W
°C  
Tstg  
-40 to +125  
3400  
5.75  
Isolation voltage between terminal and copper base (*1)  
Viso  
AC : 1min.  
VAC  
Mounting  
Screw torque (*2)  
Main Terminals  
Sense Terminals  
10  
2.5  
N m  
Note *1: All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)  
Electrical characteristics (at Tj= 25°C unless otherwise specified)  
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
1.0  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
mA  
nA  
V
-
1600  
VGE (th)  
CE = 20V, I  
C
= 800mA  
5.5  
-
6.5  
7.5  
2.64  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
2.47  
2.87  
2.25  
2.65  
75  
VCE (sat)  
(main terminal)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 15V  
Collector-Emitter saturation voltage  
V
I
C
= 800A  
2.40  
VCE (sat)  
(chip)  
Cies  
ton  
tr  
toff  
tf  
-
-
-
-
-
-
Input capacitance  
Turn-on time  
VCE = 10V, VGE = 0V, f = 1MHz  
nF  
µs  
3.10  
1.25  
1.45  
0.25  
2.02  
2.22  
1.80  
2.00  
0.45  
0.27  
VCC = 900V, I  
C
= 800A,  
VGE = ±15V, Tj = 125°C,  
R
gon = 8.2Ω, Rgoff = 3Ω  
Turn-off time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
2.39  
VF  
(main terminal)  
-
VGE = 0V  
Forward on voltage  
V
I
F
= 800A  
2.15  
VF  
(chip)  
-
-
-
Reverse recovery time  
Lead resistance, terminal-chip (*3)  
trr  
R lead  
I
F
= 800A  
µs  
mΩ  
Note *3: Biggest internal terminal resistance among arm.  
Thermal resistance characteristics  
Characteristics  
Items  
Symbols Conditions  
Units  
min.  
typ.  
max.  
IGBT  
Rth(j-c)  
-
-
-
-
-
0.026  
0.045  
-
Thermal resistance (1device)  
FWD  
°C/W  
Contact thermal resistance (1device)  
Rth(c-f)  
with Thermal Compound (*4)  
0.006  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1

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