Datasheet > 2MBI75S

2MBI75S

更新时间： 2024-11-17 22:27:43

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
4页	300K
描述
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A

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中文翻译

获取价格

数据手册

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2MBI75S 数据手册

2-Pack IGBT

1200V

2MBI 75S-120

2x75A

IGBT MODULE ( S-Series )

I Outline Drawing

I Features

• NPT-Technology

• Square SC SOA at 10 x I_C

• High Short Circuit Withstand-Capability

• Small Temperature Dependence of the Turn-Off

Switching Loss

• Low Losses And Soft Switching

I Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

I Maximum Ratings and Characteristics

I Equivalent Circuit

• Absolute Maximum Ratings ( T_c=25°C)

Items

Collector-Emitter Voltage

Gate -Emitter Voltage

Symbols

V_CES

V_GES

I_C

Ratings

1200

Units

Continuous 25°C / 80°C

100 / 75

200 / 150

Collector

Current

1ms

25°C / 80°C

I_{C PULSE}

-I_C

-I_{C PULSE}

Continuous

1ms

150

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

P_C

600

T_j

T_stg

+150

°C

-40 ∼ +125

A.C. 1min.

V_is

2500

Mounting *²

3.5

Screw Torque

Terminals *²

Note: 1*: All Terminals should be connected together when isolation test will be done.

2*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at T_j=25°C )

Items

Symbols

I_CES

Test Conditions

Min.

Typ.

Max.

1.0

200

8.5

2.6

Units

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

V_GE=0V V_CE=1200V

I_GES

V_CE=0V V_GE= 20V

V_GE=20V I_C=75mA

5.5

7.2

V_GE(th)

T_j= 25°C

T_j=125°C

2.3

Collector-Emitter Saturation Voltage

V_GE=15V I_C=75A

V_CE(sat)

2.8

Input Capacitance

V_GE=0V

V_CE=10V

f=1MHz

9’000

1’875

1’650

0.35

0.25

0.10

0.45

0.08

C_ies

C_oes

C_res

t_ON

t_r,x

Output Capacitance

Reverse Transfer Capacitance

V_CC= 600V

1.2

0.6

Turn-on Time

Turn-off Time

I_C

V_GE

R_G

75A

15V

16Ω

t_r,i

µs

1.0

0.3

t_OFF

Inductive Load

t_f

T_j= 25°C

T_j=125°C

2.3

2.0

3.0

Diode Forward On-Voltage

Reverse Recovery Time

I_F=75A; V_GE=0V

I_F=75A

V_F

t_rr

350

• Thermal Characteristics

Items

Symbols

R_th(j-c)

Test Conditions

Min.

Typ.

Max.

0.21

0.47

Units

IGBT

Thermal Resistance

Diode

°C/W

R_th(j-c)

With Thermal Compound

0.05

R_th(c-f)

12 3 4

中文翻译

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