生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
针数: | 7 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 1200 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
最大降落时间(tf): | 1000 ns | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 1080 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2MBI75J060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) | |
2MBI75J120 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C) | |
2MBI75L-060 | FUJI |
获取价格 |
IGBT(600V 75A) | |
2MBI75L-120 | FUJI |
获取价格 |
IGBT(1200V 75A) | |
2MBI75N-060 | FUJI |
获取价格 |
IGBT(600V 75A) | |
2MBI75N-120 | FUJI |
获取价格 |
IGBT(1200V 75A) | |
2MBI75NB-060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, | |
2MBI75P-140 | FUJI |
获取价格 |
IGBT(1400V 75A) | |
2MBI75P-140_04 | FUJI |
获取价格 |
IGBT Module | |
2MBI75S | FUJI |
获取价格 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A |