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2MBI650VXA-170EA-54 PDF预览

2MBI650VXA-170EA-54

更新时间： 2024-11-19 17:01:07
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 365K
描述
2-Pack(2 in 1) M271

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2MBI650VXA-170EA-54 数据手册

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http://www.fujielectric.com/products/semiconductor/  
2MBI650VXA-170EA-54  
IGBT MODULE (V series)  
IGBT Modules  
1700V / 650A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Items  
Collector-Emitter voltage  
Symbols  
Conditions  
Maximum ratings  
Units  
V
V
V
CES  
1700  
±20  
Gate-Emitter voltage  
VGES  
Tc=25°C  
Tc=100°C  
900  
650  
1300  
930  
Ic  
Continuous  
1ms  
Collector current  
Ic pulse  
-Ic  
A
-Ic pulse  
Pc  
Tj  
1ms  
1 device  
1860  
4150  
175  
Collector power dissipation  
Junction temperature  
W
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
T
T
T
jop  
150  
150  
-40 ~ +150  
°C  
C
stg  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Mounting  
Screw torque (*3) Main Terminals  
Sense Terminals  
Isolation voltage  
V
-
iso  
AC : 1min.  
4000  
VAC  
N m  
M5  
M8  
M4  
6.0  
10.0  
2.1  
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)  
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)  
Electrical characteristics (at Tj= 25°C unless otherwise specified)  
Characteristics  
Items  
Zero gate voltage collector current  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
4.0  
mA  
nA  
V
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
-
800  
V
GE (th)  
CE = 20V, I  
C
= 650mA  
6.0  
6.5  
7.0  
Tj=25°C  
-
-
-
-
-
-
-
-
-
-
-
-
2.10  
2.50  
2.60  
2.00  
2.40  
2.50  
3.00  
63  
1700  
500  
150  
1600  
110  
2.55  
-
-
2.45  
-
-
-
-
-
-
-
-
-
V
CE (sat)  
(terminal)  
(*4)  
Tj=125°C  
Tj=150°C  
Tj=25°C  
Tj=125°C  
Tj=150°C  
V
GE = 15V  
= 650A  
Collector-Emitter saturation voltage  
V
I
C
VCE (sat)  
(chip)  
Internal gate resistance  
Input capacitance  
R
g(int)  
-
Ω
nF  
Cies  
ton  
tr  
tr (i)  
toff  
tf  
V
V
CE = 10V, VGE = 0V, f = 1MHz  
CC = 900V  
Turn-on time  
Turn-off time  
I
C
= 650A  
nsec  
VGE = ±15V  
R
G
= +1.8/-1.8Ω  
Ls=70nH  
-
Tj=25°C  
Tj=125°C  
Tj=150°C  
Tj=25°C  
Tj=125°C  
Tj=150°C  
-
-
-
-
-
-
-
1.75  
1.90  
1.85  
1.65  
1.80  
1.75  
300  
5000  
495  
3375  
2.20  
-
-
2.10  
-
-
-
-
V
F
(terminal)  
(*4)  
V
GE = 0V  
= 650A  
Forward on voltage  
V
I
F
V
(chip)  
F
Reverse recovery time  
Resistance  
trr  
I
F
= 650A  
nsec  
Ω
T=25°C  
T=100°C  
T=25/50°C  
-
R
465  
3305  
520  
3450  
B value  
B
K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.  
Thermal resistance characteristics  
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
Inverter IGBT  
Inverter FWD  
with Thermal Compound  
-
-
-
-
-
0.036  
0.048  
-
Thermal resistance (1device)  
Rth(j-c)  
Rth(c-f)  
°C/W  
Contact thermal resistance (1device) (*5)  
0.0125  
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
8199a  
MARCH 2015  
1
12345678

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