5秒后页面跳转
捷配首页

Datasheet > 2MBI650VXA-170E-50
2MBI650VXA-170E-50 PDF预览

2MBI650VXA-170E-50

更新时间： 2024-11-20 12:50:39
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
7页 488K
描述
IGBT MODULE (V series) 1700V / 650A / 2 in one package

阅读下载

中文翻译

获取价格

2MBI650VXA-170E-50 数据手册

 浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第2页浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第3页浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第4页浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第5页浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第6页浏览型号2MBI650VXA-170E-50的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
2MBI650VXA-170E-50  
IGBT MODULE (V series)  
IGBT Modules  
1700V / 650A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Items  
Collector-Emitter voltage  
Symbols  
Conditions  
Maximum ratings  
Units  
V
V
CES  
1700  
Gate-Emitter voltage  
VGES  
±20  
V
Tc=25°C  
Tc=100°C  
900  
650  
1300  
650  
Ic  
Continuous  
1ms  
Collector current  
Ic pulse  
-Ic  
A
-Ic pulse  
Pc  
Tj  
1ms  
1 device  
1300  
4150  
175  
Collector power dissipation  
Junction temperature  
W
Operating junction temperature (under switching conditions)  
Case temperature  
T
T
jop  
150  
150  
°C  
C
Storage temperature  
Tstg  
-40 ~ +150  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Mounting  
Screw torque (*3) Main Terminals  
Sense Terminals  
Isolation voltage  
V
iso  
AC : 1min.  
4000  
VAC  
N m  
M5  
M8  
M4  
6.0  
10.0  
2.1  
-
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)  
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)  
Electrical characteristics (at Tj= 25°C unless otherwise specified)  
Characteristics  
Items  
Zero gate voltage collector current  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
4.0  
mA  
nA  
V
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
-
800  
V
GE (th)  
CE = 20V, I  
C
= 650mA  
6.0  
6.5  
7.0  
Tj=25°C  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.10  
2.50  
2.55  
2.00  
2.40  
2.45  
63  
1.25  
0.50  
0.15  
1.55  
0.15  
1.95  
2.20  
2.15  
1.85  
2.10  
2.05  
0.24  
5000  
495  
3375  
2.55  
-
-
2.45  
-
-
-
-
-
-
-
V
CE (sat)  
(terminal)  
(*4)  
Tj=125°C  
Tj=150°C  
Tj=25°C  
Tj=125°C  
Tj=150°C  
V
I
GE = 15V  
= 650A  
Collector-Emitter saturation voltage  
V
C
VCE (sat)  
(chip)  
Input capacitance  
Turn-on time  
Cies  
ton  
tr  
tr (i)  
toff  
tf  
VCE = 10V, VGE = 0V, f = 1MHz  
nF  
µs  
V
CC = 900V  
= 650A  
I
C
VGE = ±15V  
R = +1.8/-2.7Ω  
G
Turn-off time  
-
Tj=25°C  
Tj=125°C  
Tj=150°C  
Tj=25°C  
Tj=125°C  
Tj=150°C  
2.40  
-
-
2.30  
-
-
-
-
V
F
(terminal)  
(*4)  
V
I
GE = 0V  
Forward on voltage  
V
F
= 650A  
VF  
-
-
-
(chip)  
Reverse recovery time  
Resistance  
trr  
I
F
= 650A  
µs  
Ω
K
T=25°C  
T=100°C  
T=25/50°C  
-
R
465  
3305  
520  
3450  
B value  
B
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.  
Thermal resistance characteristics  
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
Inverter IGBT  
Inverter FWD  
with Thermal Compound  
-
-
-
-
-
0.036  
0.072  
-
Thermal resistance (1device)  
Rth(j-c)  
Rth(c-f)  
°C/W  
Contact thermal resistance (1device) (*5)  
0.0125  
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1
1234567

中文翻译

下载PDF

与2MBI650VXA-170E-50相关器件

型号 品牌 获取价格 描述 数据表
2MBI650VXA-170E-54 FUJI

获取价格

 		DISCON
2MBI650VXA-170EA-50 FUJI

获取价格

 		2-Pack(2 in 1) M271
2MBI650VXA-170EA-54 FUJI

获取价格

 		2-Pack(2 in 1) M271
2MBI650XXA170-50 FUJI

获取价格

 		2-pack M721
2MBI75-060 ETC

获取价格

 		TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
2MBI75-120 ETC

获取价格

 		TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C)
2MBI75-140 FUJI

获取价格

 		Insulated Gate Bipolar Transistor,
2MBI75F-060 FUJI

获取价格

 		IGBT(600V 75A)
2MBI75F-120 FUJI

获取价格

 		IGBT(1200V 75A)
2MBI75J060 ETC

获取价格

 		TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)

与2MBI650VXA-170E-50相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证