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2MBI600VG-120P PDF预览

2MBI600VG-120P

更新时间: 2024-09-15 19:44:51
品牌 Logo 应用领域
富士电机 - FUJI
页数 文件大小 规格书
8页 669K
描述
Insulated Gate Bipolar Transistor

2MBI600VG-120P 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2MBI600VG-120P 数据手册

 浏览型号2MBI600VG-120P的Datasheet PDF文件第2页浏览型号2MBI600VG-120P的Datasheet PDF文件第3页浏览型号2MBI600VG-120P的Datasheet PDF文件第4页浏览型号2MBI600VG-120P的Datasheet PDF文件第5页浏览型号2MBI600VG-120P的Datasheet PDF文件第6页浏览型号2MBI600VG-120P的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI600VG-120P  
IGBT MODULE (V series)  
1200V / 600A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc= 25°C unless otherwise specified)  
Items  
Symbols  
Conditions  
Maximum Ratings  
Units  
V
Collector-Emitter voltage  
VCES  
1200  
Gate-Emitter voltage  
VGES  
±20  
V
Tc=25°C  
Tc=100°C  
Tc=100°C  
800  
600  
1200  
600  
I
I
c
Continuous  
1ms  
Collector current  
cp  
A
-I  
c
-Ic pulse  
1ms  
1 device  
1200  
3940  
175  
Collector Power Dissipation  
Junction temperature  
Operating junction temperature(under switching conditions)  
Storage temperature  
P
c
W
°C  
T
T
T
j
jop  
stg  
150  
-40 ~ +150  
4000  
5.75  
10  
Isolation voltage between terminal and copper base *1  
V
iso  
AC : 1min.  
M6  
M8  
VAC  
N m  
Mounting  
Main Terminals  
Sense Terminals  
Screw Torque *2  
M4  
2.5  
(*1) All terminals should be connected together when isolation test will be done.  
(*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)  
8106  
SEPTEMBER 2013  
1

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