是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | Reach Compliance Code: | unknown |
风险等级: | 5.71 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 125 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1970 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 600 ns |
标称接通时间 (ton): | 650 ns | VCEsat-Max: | 2.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2MBI400VD-120-50 | FUJI |
获取价格 |
IGBT MODULE (V series) 1200V / 400A / 2 in one package | |
2MBI400VE-170-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M277 | |
2MBI400XBE065-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M274 | |
2MBI400XDE065-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M275 | |
2MBI400XDE120-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M275 | |
2MBI400XEE170-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M277 | |
2MBI400XHA170-50 | FUJI |
获取价格 |
2-Pack(2 in 1) M276 | |
2MBI450U4E-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
2MBI450U4J-120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, M | |
2MBI450U4N-170-50 | FUJI |
获取价格 |
IGBT MODULE |