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2MBI400VB-060-50 PDF预览

2MBI400VB-060-50

更新时间: 2024-09-13 12:50:39
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 417K
描述
IGBT MODULE (V series) 600V / 400A / 2 in one package

2MBI400VB-060-50 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:unknown风险等级:5.69
外壳连接:ISOLATED最大集电极电流 (IC):400 A
集电极-发射极最大电压:600 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):600 ns标称接通时间 (ton):650 ns
Base Number Matches:1

2MBI400VB-060-50 数据手册

 浏览型号2MBI400VB-060-50的Datasheet PDF文件第2页浏览型号2MBI400VB-060-50的Datasheet PDF文件第3页浏览型号2MBI400VB-060-50的Datasheet PDF文件第4页浏览型号2MBI400VB-060-50的Datasheet PDF文件第5页浏览型号2MBI400VB-060-50的Datasheet PDF文件第6页 
http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI400VB-060-50  
IGBT MODULE (V series)  
600V / 400A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
600  
±20  
V
V
VGES  
I
I
C
Continuous  
1ms  
T
C
=80°C  
400  
800  
C pulse  
Collector current  
-I  
C
400  
-IC pulse  
1ms  
800  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
P
C
1 device  
1970  
175  
150  
W
T
T
T
T
j
jop  
C
°C  
125  
stg  
-40 ~ 125  
2500  
3.5  
Isolation voltage between terminal and copper base (*1)  
V
-
-
iso  
AC : 1min.  
VAC  
N m  
Mounting (*2)  
Terminals (*3)  
Screw torque  
3.5  
Note *1:All terminals should be connected together during the test.  
Note *2: Recommendable Value : 2.5-3.5 Nm (M5 or M6)  
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 600V  
CE = 0V, VGE = ±20V  
-
2.0  
400  
7.2  
2.35  
-
mA  
nA  
V
-
6.2  
-
V
GE (th)  
CE = 20V, I  
C
= 400mA  
6.7  
T
T
T
T
T
T
j
j
j
j
j
j
=25°C  
1.90  
2.20  
2.30  
1.60  
1.90  
2.00  
2.0  
VCE (sat)  
V
I
GE = 15V  
= 400A  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
(terminal)  
C
Collector-Emitter saturation voltage  
V
-
-
2.05  
-
V
CE (sat)  
V
I
GE = 15V  
= 400A  
(chip)  
C
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
nF  
VCE = 10V, VGE = 0V, f = 1MHz  
25.6  
650  
300  
100  
600  
70  
1.75  
1.65  
1.62  
1.60  
1.50  
1.47  
200  
t
t
t
t
t
on  
V
CC = 300V  
= 400A  
LS = 30nH  
Turn-on time  
Turn-off time  
r
I
C
r (i)  
off  
f
nsec  
V
GE = ±15V  
R = 3.3Ω  
G
Tj  
= 150°C  
-
2.20  
-
T
T
j
j
=25°C  
VF  
V
I
GE = 0V  
= 400A  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(terminal)  
F
T
j
Forward on voltage  
V
T
T
j
j
-
-
2.05  
-
V
F
V
I
GE = 0V  
= 400A  
(chip)  
F
T
j
Reverse recovery time  
Thermal resistance characteristics  
Items  
t
rr  
I
F
= 400A  
-
-
nsec  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.076  
0.140  
-
Thermal resistance (1device)  
R
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device) (*4)  
with Thermal Compound  
0.025  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1

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