2MBI400N-060

更新时间： 2024-09-12 22:06:11

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
4页	159K
描述
IGBT(600V,400A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2MBI400N-060 数据手册

IGBT MODULE ( N series )

n Outline Drawing

n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n Maximum Ratings and Characteristics

n Equivalent Circuit

• Absolute Maximum Ratings ( T_c=25°C)

Items

Collector-Emitter Voltage

Gate -Emitter Voltage

Symbols

Ratings

600

± 20

Units

V_CES

V_GES

Continuous

1ms

Continuous

1ms

I_C

400

800

400

800

Collector

Current

I_{C PULSE}

-I_C

-I_{C PULSE}

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

P_C

T_j

T_stg

V_is

Mounting *1

Terminals *2

1500

+150

-40 ~ +125

2500

3.5

°C

A.C. 1min.

Screw Torque

4.5

Note: *1:Recommendable Value; 2.5 ~ 3.5 Nm (M5) or (M6)

*2:Recommendable Value; 3.5 ~ 4.5 Nm (M6)

• Electrical Characteristics ( at T_j=25°C )

Items

Symbols

Test Conditions

V_GE=0V V_CE=600V

V_CE=0V V_GE=± 20V

V_GE=20V I_C=400mA

V_GE=15V I_C=400A

V_GE=0V

V_CE=10V

f=1MHz

V_CC=300V

I_C=400A

Min.

Typ.

Max.

2.0

7.5

2.8

Units

µA

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

I_CES

I_GES

V_GE(th)

V_CE(sat)

C_ies

C_oes

C_res

t_ON

t_r

t_OFF

t_f

4.5

26400

5870

2670

0.6

0.2

0.6

Output capacitance

Reverse Transfer capacitance

1.2

0.6

1.0

0.35

3.0

350

Turn-on Time

Turn-off Time

µs

V_GE=± 15V

R_G=4.7W

I_F=400A V_GE=0V

I_F=400A

0.2

Diode Forward On-Voltage

Reverse Recovery Time

V_F

t_rr

• Thermal Characteristics

Items

Symbols

Test Conditions

Min.

Typ.

Max.

0.085

0.15

Units

R_th(j-c)

R_th(c-f)

IGBT

Diode

Thermal Resistance

°C/W

With Thermal Compound

0.025

12 3 4

中文翻译

下载PDF

与2MBI400N-060相关器件

型号	品牌	获取价格	描述	数据表
2MBI400N-060-01	FUJI	获取价格	IGBT(600V / 400A)
2MBI400N-060-01A	FUJI	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400N-060-01B	FUJI	获取价格	暂无描述
2MBI400N-060-01C	FUJI	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400N-060-01D	FUJI	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7
2MBI400N-060-01F	FUJI	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400NT-060-02	FUJI	获取价格	IGBT module
2MBI400P-140	FUJI	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 1400V V(BR)CES, N-Channel
2MBI400TB-060	FUJI	获取价格	IGBT Module
2MBI400U2B-060	FUJI	获取价格	IGBT Module