http://www.fujielectric.com/products/semiconductor/
IGBT Modules
2MBI300VH-170-50
IGBT MODULE (V series)
1700V / 300A / 2 in one package
Features
Package No. : M276
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at T =25°C unless otherwise specified)
C
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
1700
±20
V
V
V
GES
T
T
C
C
=25°C
=100°C
300
440
600
I
I
C
Continuous
1ms
Collector current
C pulse
A
-IC
300
-IC pulse
1ms
600
Collector power dissipation
Junction temperature
Operating junction temperature (under switching conditions)
Case temperature
Storage temperature
P
C
1 device
1805
175
150
W
T
T
T
T
j
jop
C
°C
125
stg
-40 ~ 125
4000
6.0
Isolation voltage between terminal and copper base (*1)
Viso
AC : 1min.
VAC
N m
Mounting (*2)
Terminals (*3)
-
-
Screw torque
5.0
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 N·m (M5)
Electrical characteristics (at T= 25°C unless otherwise specified)
j
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1700V
CE = 0V, VGE = ±20V
-
-
2.0
mA
nA
V
-
400
V
GE (th)
CE = 20V, I
C
= 300mA
6.0
-
-
-
-
-
-
-
-
6.5
7.0
Tj
Tj
Tj
Tj
Tj
Tj
=25°C
2.15
2.55
2.60
2.00
2.40
2.45
2.5
2.60
VCE (sat)
=125°C
=150°C
=25°C
=125°C
=150°C
-
-
(terminal)
VGE = 15V
Collector-Emitter saturation voltage
V
I
C
= 300A
2.45
VCE (sat)
-
-
-
-
(chip)
Internal gate resistance
Input capacitance
R
C
G (int)
ies
-
Ω
nF
VCE = 10V, VGE = 0V, f = 1MHz
33
t
t
t
t
t
on
-
-
-
-
-
-
-
-
-
-
-
-
1150
580
60
-
-
-
-
Turn-on time
Turn-off time
r
V
CC = 900V, I
C
= 300A
r (i)
off
f
V
GE = ±15V, Rg_on= 4.7Ω, Rg_off= 2.4Ω
nsec
T
j
=150°C, L
S
= 30nH
1050
140
1.95
2.15
2.15
1.80
2.05
2.05
220
-
Tj
Tj
Tj
Tj
Tj
Tj
=25°C
2.40
-
-
V
F
=125°C
=150°C
=25°C
=125°C
=150°C
(terminal)
VGE = 0V
Forward on voltage
V
I
F
F
= 300A
2.25
V
(chip)
F
-
-
-
Reverse recovery time
Thermal resistance characteristics
Items
trr
I
= 300A
nsec
Characteristics
Symbols
Conditions
Units
min.
typ.
max.
IGBT
FWD
-
-
-
-
-
0.083
0.130
-
Thermal resistance(1device)
R
th(j-c)
th(c-f)
°C/W
Contact thermal resistance (1device) (*4)
R
with Thermal Compound
0.0125
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
7930a
May 2012
1