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2MBI300VH-170-50 PDF预览

2MBI300VH-170-50

更新时间: 2024-11-06 20:04:07
品牌 Logo 应用领域
富士电机 - FUJI 局域网电动机控制晶体管
页数 文件大小 规格书
6页 444K
描述
Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, M276, 7 PIN

2MBI300VH-170-50 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:unknown风险等级:5.59
外壳连接:ISOLATED最大集电极电流 (IC):300 A
集电极-发射极最大电压:1700 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1050 ns标称接通时间 (ton):1150 ns
Base Number Matches:1

2MBI300VH-170-50 数据手册

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http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI300VH-170-50  
IGBT MODULE (V series)  
1700V / 300A / 2 in one package  
Features  
Package No. : M276  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
V
GES  
T
T
C
C
=25°C  
=100°C  
300  
440  
600  
I
I
C
Continuous  
1ms  
Collector current  
C pulse  
A
-IC  
300  
-IC pulse  
1ms  
600  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
P
C
1 device  
1805  
175  
150  
W
T
T
T
T
j
jop  
C
°C  
125  
stg  
-40 ~ 125  
4000  
6.0  
Isolation voltage between terminal and copper base (*1)  
Viso  
AC : 1min.  
VAC  
N m  
Mounting (*2)  
Terminals (*3)  
-
-
Screw torque  
5.0  
Note *1: All terminals should be connected together during the test.  
Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6)  
Note *3: Recommendable Value : 2.5-5.0 N·m (M5)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
2.0  
mA  
nA  
V
-
400  
V
GE (th)  
CE = 20V, I  
C
= 300mA  
6.0  
-
-
-
-
-
-
-
-
6.5  
7.0  
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.15  
2.55  
2.60  
2.00  
2.40  
2.45  
2.5  
2.60  
VCE (sat)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
-
(terminal)  
VGE = 15V  
Collector-Emitter saturation voltage  
V
I
C
= 300A  
2.45  
VCE (sat)  
-
-
-
-
(chip)  
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
Ω
nF  
VCE = 10V, VGE = 0V, f = 1MHz  
33  
t
t
t
t
t
on  
-
-
-
-
-
-
-
-
-
-
-
-
1150  
580  
60  
-
-
-
-
Turn-on time  
Turn-off time  
r
V
CC = 900V, I  
C
= 300A  
r (i)  
off  
f
V
GE = ±15V, Rg_on= 4.7Ω, Rg_off= 2.4Ω  
nsec  
T
j
=150°C, L  
S
= 30nH  
1050  
140  
1.95  
2.15  
2.15  
1.80  
2.05  
2.05  
220  
-
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.40  
-
-
V
F
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(terminal)  
VGE = 0V  
Forward on voltage  
V
I
F
F
= 300A  
2.25  
V
(chip)  
F
-
-
-
Reverse recovery time  
Thermal resistance characteristics  
Items  
trr  
I
= 300A  
nsec  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.083  
0.130  
-
Thermal resistance(1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device) (*4)  
R
with Thermal Compound  
0.0125  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
7930a  
May 2012  
1

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