http://www.fujielectric.com/products/semiconductor/
IGBT Modules
2MBI300VE-120-50
IGBT MODULE (V series)
1200V / 300A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
Conditions
Maximum ratings
Units
V
V
V
CES
1200
±20
Gate-Emitter voltage
VGES
Tc=100°C
Tc=25°C
300
360
600
300
Ic
Continuous
1ms
Collector current
Ic pulse
-Ic
-Ic pulse
Pc
Tj
1ms
1 device
600
2200
175
Collector power dissipation
Junction temperature
W
Operating junction temperature (under switching conditions)
Case temperature
T
T
jop
150
125
°C
C
Storage temperature
Isolation voltage between terminal and copper base (*1)
Tstg
-40 ~ +125
2500
6.0
V
iso
AC : 1min.
VAC
N m
Mounting (*2)
Terminals (*3)
Screw torque
-
5.0
Note *1:All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
-
max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
CE = 0V, VGE = ±20V
-
2.0
800
7.0
2.60
-
mA
nA
V
-
6.0
-
V
GE (th)
CE = 20V, I
C
= 300mA
6.5
Tj=25°C
2.05
2.40
2.45
1.85
2.20
2.25
24
VCE (sat)
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
-
(terminal)
V
I
GE = 15V
= 300A
Collector-Emitter saturation voltage
V
C
-
-
2.15
-
V
CE (sat)
(chip)
Input capacitance
Turn-on time
Cies
ton
tr
tr (i)
toff
tf
VCE = 10V, VGE = 0V, f = 1MHz
-
-
-
-
-
-
-
-
-
-
-
-
nF
µs
0.60
0.20
0.05
0.80
0.08
1.85
2.00
1.95
1.70
1.85
1.80
0.15
V
CC = 600V
= 300A
LS = 30nH
I
C
V
R
GE = ±15V
= 1.8Ω
G
-
Turn-off time
Tj = 150°C
-
2.40
-
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
V
F
(terminal)
V
I
GE = 0V
= 300A
Forward on voltage
V
F
-
-
2.15
-
V
F
(chip)
Reverse recovery time
trr
I
F
= 300A
-
-
µs
Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
IGBT
FWD
-
-
-
-
-
0.068
0.110
-
Thermal resistance (1device)
Rth(j-c)
Rth(c-f)
°C/W
Contact thermal resistance (1device) (*4)
with Thermal Compound
0.0125
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1