Datasheet > 2MBI300UB-060

2MBI300UB-060

更新时间： 2024-11-06 19:38:35

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
5页	87K
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Insulated Gate Bipolar Transistor,

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2MBI300UB-060 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

2MBI300UB-060 数据手册

T-series and U-series IGBT

Modules (600 V)

Seiji Momota

Syuuji Miyashita

Hiroki Wakimoto

1. Introduction

for the above new IGBT modules. This paper presents

these device techniques and the product series.

The IGBT (insulated gate bipolar transistor) mod-

ule is the most popular power device in power electron-

ics fields such as motor control applications. The

reason for the IGBT’s popularity is the market values

of its excellent reliability due to reduction of generated

loss and increase of withstand capability, etc., in

addition to the fact that it can be easily driven. The

600 V IGBT modules play an especially important role

as key devices in a wide market area including the

Japanese domestic market where 220 V industrial

power supplies are used and overseas such as in

Europe where 200 V public power supplies are used as

general-purpose power supplies.

Under these circumstances, Fuji Electric has also

been developing a 600 V IBGT module product series,

and has continued to improve their characteristics ever

since first developing the series in 1988. In 2001, the

development of thin wafer processing technology en-

abled NPT (non-punch through) structure to be applied

to 600 V devices. This made possible the development

of T-series IGBTs, having low switching loss and being

especially suitable for high frequency applications.

While development of NPT technology mainly

involved by development of the structure at the back of

the chip, improvements of the chip’s front structure

have also been implemented since 2002. By applying

trench-gate-structure, increase in channel density and

elimination of the unnecessary voltage-drop component

was achieved, thereby enabling the reduction of on-

state loss. This made the development of U-series

IGBTs successful, as the device having the smallest

loss among products of its class, and at present, we are

in the process of producing various rated current series

and sample modules.

2. T-series IGBT Modules

2.1 Features and challenges of T-series IGBT modules

The cell structure of an NPT-type IGBT and the

unit cell of PT (punch-through)-type device are shown

in Fig. 1. Their features are as follows:

(1) Since injection from the collector-side can be

suppressed, lifetime control is unnecessary and

the switching loss does not increase even at a high

temperature.

(2) Because the temperature dependence of output

characteristics is positive (the saturation voltage

increases at higher temperatures), these devices

are well suited for parallel applications.

(3) Withstand capability including load short-circuit

capacity are higher than those of a PT-type device.

(4) Use of an FZ (floating zone) wafer makes the price

cheap and the reliability high owing to its low

crystal defects.

The challenge is to establish a thin wafer process-

ing technique. It is important for NPT-type devices to

suppress saturation voltage while maintaining the

collector-emitter (CE) forward blocking voltage. This

Fig.1 Comparison of unit cell structures

For the FWD (free wheeling diode) packed in IGBT

modules, enhanced soft-recovery characteristics as well

as decreased loss is demanded. These demands are not

only for the sake of preventing equipment malfunction,

but also to preventing possible ill effects of noise

emission on the surrounding equipment and on the

human body. To satisfy these requirements, FWDs

having a new structure were developed and adopted

(a) PT-type IGBT

(b) NPT-type IGBT

110

Vol. 48 No. 4 FUJI ELECTRIC REVIEW

12 3 4 5

中文翻译

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与2MBI300UB-060相关器件

型号	品牌	获取价格	描述	数据表
2MBI300UC-120	FUJI	获取价格	IGBT MODULE
2MBI300UD-120	ETC	获取价格	DUAL IGBT
2MBI300UE-120	ETC	获取价格	IGBTs
2MBI300VB-060-50	FUJI	获取价格	IGBT MODULE (V series) 600V / 300A / 2 in one package
2MBI300VD-120-50	FUJI	获取价格	IGBT MODULE (V series) 1200V / 300A / 2 in one package
2MBI300VE-120-50	FUJI	获取价格	IGBT MODULE (V series) 1200V / 300A / 2 in one package
2MBI300VE-170-50	FUJI	获取价格	Insulated Gate Bipolar Transistor
2MBI300VH-120-50	FUJI	获取价格	IGBT MODULE (V series) 1200V / 300A / 2 in one package
2MBI300VH-170-50	FUJI	获取价格	Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, M276, 7 PIN
2MBI300VJ-120-50	FUJI	获取价格	IGBT MODULE

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