是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | Reach Compliance Code: | unknown |
风险等级: | 5.62 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 200 A | 集电极-发射极最大电压: | 1700 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1050 ns |
标称接通时间 (ton): | 1150 ns | Base Number Matches: | 1 |
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2MBI200XAA065-50 | FUJI |
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2-Pack(2 in 1) |
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2MBI200XAA120-50 | FUJI |
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2MBI200XBE120-50 | FUJI |
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2-Pack(2 in 1) M274 |
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2MBI200XHA170-50 | FUJI |
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2-Pack(2 in 1) M276 |
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2MBI225U4J-120-50 | FUJI |
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IGBT Module |
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2MBI225U4N-120-50 | FUJI |
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Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PA |
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2MBI225U4N-170-50 | FUJI |
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IGBT MODULE |
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2MBI225VJ-120-50 | FUJI |
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IGBT MODULE |
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2MBI225VN-120-50 | FUJI |
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IGBT MODULE |
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2MBI225VN-120S-50 | FUJI |
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Insulated Gate Bipolar Transistor |
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