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2MBI150VH-170-50 PDF预览

2MBI150VH-170-50

更新时间： 2024-09-13 21:20:11
品牌 Logo 应用领域
富士电机 - FUJI 栅
页数 文件大小 规格书
6页 444K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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2MBI150VH-170-50 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.6
Base Number Matches：1

2MBI150VH-170-50 数据手册

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http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI150VH-170-50  
IGBT MODULE (V series)  
1700V / 150A / 2 in one package  
Features  
Package No. : M276  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
V
GES  
T
T
C
C
=25°C  
=100°C  
150  
250  
300  
I
I
C
Continuous  
1ms  
Collector current  
C pulse  
A
-IC  
150  
-IC pulse  
1ms  
300  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
P
C
1 device  
1110  
175  
150  
W
T
T
T
T
j
jop  
C
°C  
125  
stg  
-40 ~ 125  
4000  
6.0  
Isolation voltage between terminal and copper base (*1)  
Viso  
AC : 1min.  
VAC  
N m  
Mounting (*2)  
Terminals (*3)  
-
-
Screw torque  
5.0  
Note *1: All terminals should be connected together during the test.  
Note *2: Recommendable Value : 3.0-6.0 N·m (M5 or M6)  
Note *3: Recommendable Value : 2.5-5.0 N·m (M5)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
2.0  
mA  
nA  
V
-
400  
V
GE (th)  
CE = 20V, I  
C
= 150mA  
6.0  
-
-
-
-
-
-
-
-
6.5  
7.0  
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.20  
2.60  
2.65  
2.00  
2.40  
2.45  
5.0  
2.65  
VCE (sat)  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
-
(terminal)  
VGE = 15V  
Collector-Emitter saturation voltage  
V
I
C
= 150A  
2.45  
VCE (sat)  
-
-
-
-
(chip)  
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
Ω
nF  
VCE = 10V, VGE = 0V, f = 1MHz  
16  
t
t
t
t
t
on  
-
-
-
-
-
-
-
-
-
-
-
-
950  
350  
60  
-
-
-
-
Turn-on time  
Turn-off time  
r
V
CC = 900V, I  
C
= 150A  
r (i)  
off  
f
V
GE = ±15V, Rg_on=Rg_off= 4.8Ω  
nsec  
T
j
=150°C, L  
S
= 30nH  
1050  
140  
1.95  
2.20  
2.20  
1.80  
2.05  
2.05  
220  
-
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
2.40  
-
-
V
F
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(terminal)  
VGE = 0V  
Forward on voltage  
V
I
F
F
= 150A  
1.95  
V
(chip)  
F
-
-
-
Reverse recovery time  
Thermal resistance characteristics  
Items  
trr  
I
= 150A  
nsec  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.135  
0.200  
-
Thermal resistance(1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device) (*4)  
R
with Thermal Compound  
0.0250  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
7938a  
May 2012  
1
123456

中文翻译

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