生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
针数: | 7 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 其他特性: | LOW SATURATION VOLTAGE |
最大集电极电流 (IC): | 150 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-PUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1500 ns | 标称接通时间 (ton): | 800 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2MBI150F-120 | FUJI |
获取价格 |
IGBT MODULE(F series) | |
2MBI150HH-120-50 | FUJI |
获取价格 |
HIGH SPEED IGBT MODULE 1200V / 150A / 2 in one package | |
2MBI150HJ-120-50 | FUJI |
获取价格 |
2-Pack(2 in 1) | |
2MBI150J060 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 150A I(C) | |
2MBI150J120 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C) | |
2MBI150J-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES | |
2MBI150L-060 | FUJI |
获取价格 |
IGBT MODULE(L series) | |
2MBI150L-120 | FUJI |
获取价格 |
IGBT MODULE(L series) | |
2MBI150LB-060 | FUJI |
获取价格 |
IGBT MODULE | |
2MBI150N-060 | FUJI |
获取价格 |
IGBT MODULE ( N series ) |