Datasheet > 2MBI1200VG-120P

2MBI1200VG-120P

更新时间： 2024-10-15 17:01:39

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	696K
描述
DISCON

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中文翻译

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数据手册

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2MBI1200VG-120P 数据手册

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

2MBI1200VG-120P

IGBT MODULE (V series)

1200V / 1200A / 2 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Items

Symbols

Conditions

Maximum Ratings

Units

Collector-Emitter voltage

CES

1200

Gate-Emitter voltage

GES

±20

Tc=25°C

Tc=100°C

1600

1200

2400

1200

2400

6810

175

-I

-I^{c pulse}

Continuous

1ms

Collector current

1ms

1 device

Collector Power Dissipation

Junction temperature

Operating junction temperature(under switching conditions)

Storage temperature

Isolation voltage between terminal and copper base *1

°C

jop

stg

150

-40 ~ +150

4000

5.75

iso

AC : 1min.

VAC

N m

Mounting

Main Terminals

Sense Terminals

Screw Torque *2

2.5

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)

8108

SEPTEMBER 2013

12 3 4 5 6 7 8

中文翻译

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