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2MBI100VA-120-50 PDF预览

2MBI100VA-120-50

更新时间： 2024-10-30 12:50:39
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 470K
描述
IGBT MODULE (V series) 1200V / 100A / 2 in one package

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中文翻译

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2MBI100VA-120-50 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：1.35
Base Number Matches：1

2MBI100VA-120-50 数据手册

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http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI100VA-120-50  
IGBT MODULE (V series)  
1200V / 100A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
V
V
VGES  
I
I
C
Continuous  
1ms  
T
C
=100°C  
100  
200  
C pulse  
Collector current  
A
W
°C  
-I  
-IC pulse  
P
T
T
T
T
V
-
C
100  
200  
555  
175  
150  
125  
1ms  
1 device  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
C
j
jop  
C
stg  
-40 ~ 125  
2500  
5.0  
Isolation voltage between terminal and copper base (*1)  
iso  
AC : 1min.  
VAC  
N m  
Mounting (*2)  
Terminals (*3)  
Screw torque  
-
5.0  
Note *1:All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6)  
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1200V  
CE = 0V, VGE = ±20V  
-
1.0  
200  
7.0  
2.35  
-
mA  
nA  
V
-
6.0  
-
V
GE (th)  
CE = 20V, I  
C
= 100mA  
6.5  
T
T
T
T
T
T
j
j
j
j
j
j
=25°C  
1.90  
2.20  
2.25  
1.75  
2.05  
2.10  
7.5  
VCE (sat)  
VGE = 15V  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
(terminal)  
I
C
= 100A  
Collector-Emitter saturation voltage  
V
-
-
2.20  
-
V
CE (sat)  
VGE = 15V  
(chip)  
I
C
= 100A  
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
nF  
VCE = 10V, VGE = 0V, f = 1MHz  
9.1  
t
t
t
t
t
on  
V
CC = 600V  
= 100A  
LS  
= 30nH  
600  
200  
50  
Turn-on time  
Turn-off time  
r
I
C
r (i)  
off  
f
VGE = ±15V  
nsec  
R
G
= 1.6Ω  
600  
40  
Tj  
= 150°C  
-
2.25  
-
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
1.80  
1.95  
1.90  
1.70  
1.85  
1.80  
150  
VF  
VGE = 0V  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(terminal)  
I
F
= 100A  
Forward on voltage  
V
-
-
2.15  
-
V
F
VGE = 0V  
(chip)  
I
F
= 100A  
Reverse recovery time  
Thermal resistance characteristics  
Items  
t
rr  
IF  
= 100A  
-
-
nsec  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.27  
0.48  
-
Thermal resistance (1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device) (*4)  
R
with Thermal Compound  
0.050  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1
123456

中文翻译

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