5秒后页面跳转
捷配首页

Datasheet > 2MBI100VA-060-50
2MBI100VA-060-50 PDF预览

2MBI100VA-060-50

更新时间： 2024-10-30 12:21:47
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 450K
描述
IGBT MODULE (V series) 600V / 100A / 2 in one package

阅读下载

中文翻译

获取价格

2MBI100VA-060-50 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.58
Base Number Matches：1

2MBI100VA-060-50 数据手册

 浏览型号2MBI100VA-060-50的Datasheet PDF文件第2页浏览型号2MBI100VA-060-50的Datasheet PDF文件第3页浏览型号2MBI100VA-060-50的Datasheet PDF文件第4页浏览型号2MBI100VA-060-50的Datasheet PDF文件第5页浏览型号2MBI100VA-060-50的Datasheet PDF文件第6页 
http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
2MBI100VA-060-50  
IGBT MODULE (V series)  
600V / 100A / 2 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
600  
±20  
V
V
VGES  
I
I
C
Continuous  
1ms  
T
C
=100°C  
100  
200  
C pulse  
Collector current  
A
W
°C  
-I  
-IC pulse  
P
T
T
T
T
V
-
C
100  
200  
650  
175  
150  
125  
1ms  
1 device  
Collector power dissipation  
Junction temperature  
Operating junction temperature (under switching conditions)  
Case temperature  
Storage temperature  
C
j
jop  
C
stg  
-40 ~ 125  
2500  
5.0  
Isolation voltage between terminal and copper base (*1)  
iso  
AC : 1min.  
VAC  
N m  
Mounting (*2)  
Terminals (*3)  
Screw torque  
-
5.0  
Note *1:All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable Value : 3.0-5.0 Nm (M5 or M6)  
Note *3: Recommendable Value : 2.5-3.5 Nm (M5)  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
-
max.  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 600V  
CE = 0V, VGE = ±20V  
-
1.0  
200  
7.2  
2.15  
-
mA  
nA  
V
-
6.2  
-
V
GE (th)  
CE = 20V, I  
C
= 100mA  
6.7  
T
T
T
T
T
T
j
j
j
j
j
j
=25°C  
1.70  
2.00  
2.20  
1.60  
1.90  
2.10  
9
VCE (sat)  
VGE = 15V  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
-
(terminal)  
I
C
= 100A  
Collector-Emitter saturation voltage  
V
-
-
2.05  
-
V
CE (sat)  
VGE = 15V  
(chip)  
I
C
= 100A  
Internal gate resistance  
Input capacitance  
R
C
G (int)  
ies  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ω
nF  
VCE = 10V, VGE = 0V, f = 1MHz  
6.4  
t
t
t
t
t
on  
V
CC = 300V  
= 100A  
LS  
= 30nH  
650  
300  
100  
600  
40  
1.65  
1.55  
1.52  
1.60  
1.50  
1.47  
200  
Turn-on time  
Turn-off time  
r
I
C
r (i)  
off  
f
VGE = ±15V  
nsec  
R
G
= 13Ω  
Tj  
= 150°C  
-
2.10  
-
Tj  
Tj  
Tj  
Tj  
Tj  
Tj  
=25°C  
VF  
VGE = 0V  
=125°C  
=150°C  
=25°C  
=125°C  
=150°C  
(terminal)  
I
F
= 100A  
Forward on voltage  
V
-
-
2.05  
-
V
F
VGE = 0V  
(chip)  
I
F
= 100A  
Reverse recovery time  
Thermal resistance characteristics  
Items  
t
rr  
IF  
= 100A  
-
-
nsec  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
IGBT  
FWD  
-
-
-
-
-
0.45  
0.80  
-
Thermal resistance (1device)  
R
th(j-c)  
th(c-f)  
°C/W  
Contact thermal resistance (1device) (*4)  
R
with Thermal Compound  
0.050  
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1
123456

中文翻译

下载PDF

与2MBI100VA-060-50相关器件

型号 品牌 获取价格 描述 数据表
2MBI100VA-120-50 FUJI

获取价格

 		IGBT MODULE (V series) 1200V / 100A / 2 in one package
2MBI100VA-170-50 FUJI

获取价格

 		2-Pack(2 in 1) M263
2MBI100XAA120-50 FUJI

获取价格

 		2-Pack(2 in 1)
2MBI100XAA170-50 FUJI

获取价格

 		2-Pack(2 in 1) M263
2MBI1200U4G-120 FUJI

获取价格

 		IGBT-Module
2MBI1200U4G-170 FUJI

获取价格

 		IGBT MODULE
2MBI1200UG-170 ETC

获取价格

 		IGBT MODULE
2MBI1200VG-120P FUJI

获取价格

 		DISCON
2MBI1200VG-170E FUJI

获取价格

 		Insulated Gate Bipolar Transistor
2MBI1200VG-170E FUJITSU

获取价格

 		Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

与2MBI100VA-060-50相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证