生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X7 | 针数: | 7 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 100 A |
集电极-发射极最大电压: | 600 V | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT |
最大降落时间(tf): | 350 ns | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 800 W | 最大功率耗散 (Abs): | 400 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 600 ns |
标称接通时间 (ton): | 600 ns | VCEsat-Max: | 2.8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2MBI100N-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
2MBI100NB-060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, | |
2MBI100NB-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
2MBI100NC-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
2MBI100NE-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
2MBI100NT-120-01 | FUJI |
获取价格 |
IGBT module | |
2MBI100P-140 | FUJI |
获取价格 |
IGBT MODULE ( P-Series ) | |
2MBI100PC-140 | FUJI |
获取价格 |
IGBT MODULE ( P-Series ) | |
2MBI100PC-140_04 | FUJI |
获取价格 |
IGBT Module | |
2MBI100S-120 | FUJI |
获取价格 |
IGBT MODULE |