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2KK7106 PDF预览

2KK7106

更新时间: 2024-11-21 18:09:43
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 268K
描述
N-Channel MOSFET

2KK7106 数据手册

 浏览型号2KK7106的Datasheet PDF文件第2页浏览型号2KK7106的Datasheet PDF文件第3页浏览型号2KK7106的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2KK7106  
SOP-8  
Ƶ Features  
ƽ BVDSS = 60 V  
ƽ ID = 12 A  
ƽ RDS(ON) Typ. (at VGS = 4.5 V) = 12 mȍ  
ƽ Low On-resistance  
0.15  
1.50  
ƽ High conversion efficiency  
ƽ Fast Switching Characteristic  
5 Drain  
6 Drain  
7 Drain  
8 Drain  
1 Source  
2 Source  
3 Source  
4 Gate  
D
G
S
Ƶ Absolute Maximum Ratings (T  
j
= 25ć unless otherwise noted)  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
60  
±20  
12  
T
A
=25ć  
=70ć  
Continuous Drain Current  
ID  
TA  
8
A
*1  
Pulsed Drain Current  
I
DM  
AS  
AS  
48  
Avalanche Current, Single pulsed *2  
Avalanche Energy, Single pulsed *2  
Power Dissipation  
I
40  
E
80  
mJ  
W
TC  
=25ć  
P
D
2.0  
Thermal Resistance, Junction- to-Ambient  
Thermal Resistance, Junction- to-Case  
Junction Temperature  
R
ɽJA  
72  
ć/W  
RșJC  
20  
T
J
150  
-55 to 150  
ć
Storage Temperature Range  
Notes:  
T
stg  
1. Repetitive rating; pulse width limited by max. junction temperature.  
2. Limited by TJmax, starting T = 25°C, L = 0.1mH,R = 25ȍ, IAS = 40A, VGS =10V. Part not recommended for use  
above this value  
J
G
1
www.kexin.com.cn  

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