Datasheet > 2KK6018

2KK6018

更新时间： 2024-11-18 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	441K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK6018 数据手册

DIP Type

MOSFET

N-Channel MOSFET

2KK6018

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● BV^DSS= 60 V

● ID = 120 A

● RDS(on) < 3.5mΩ @ VGS = 10V

● RDS(on) < 5mΩ @ VGS = 4.5V

1.27

0.10

1.52

0.80

0.10

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

1 GATE

2 DRAIN

3 SOURCE

10.00

± 0.20

■ Absolute Maximum Ratings (T

= 25℃, unless otherwise specified) (Note 1)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

120

= 25℃

Continuous Drain Current (Note 2)

= 100℃

Pulsed Drain Current (Note 3)

Avalanche Current (Note 3)

320

120

432

160

62.5

0.94

Single Pulse Avalanche Energy (Note 4)

Power Dissipation

Thermal Resistance. Junction- to-Ambient

Thermal Resistance. Junction- to-Case

θJA

θJC

℃/W

Operating Junction and Storage Temperature Range

,Tstg

-55 to 175

℃

Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

2. Drain current limited by maximum junction temperature.

3. Repetitive Rating: Pulse width limited by maximum junction temperature.

4. L =0.06mH, IAS = 120A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C.

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