Datasheet > 2KK6015DFN

2KK6015DFN

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	349K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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2KK6015DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK6015DFN

DFN5x6-8

■ Features

● V^{DS (V)}= 150 V

●

ID = 90 A

● RDS(ON) = 9 mΩ (typ.) @ VGS = 10 V

● Ultra-Low RDS(ON)

● Low Gate Charge

● High Current Capability

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

150

Unit

VDS

Gate-Source Voltage

±20

= 25℃

Continuous Drain Current

63.5

360

= 100℃

Pulsed Drain Current

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

583

150

Thermal Resistance, Junction- to-Case (Note 2)

Junction Temperature

θJC

0.83

150

℃

Storage Temperature Range

Notes:

stg

-55 to 150

1. EAS condition : T

2. Surface Mounted on FR4 Board, t ≤ 10 sec. The value of RθJA is measured with the device mounted on 1in²FR-4 board

with 2oz. Copper, in a still air environment with T =25° C. the maximum allowed junction temperature of 150°C. The value

in any given application depends on the user's specific board design.

j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω

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