Datasheet > 2KK6014DFN

2KK6014DFN

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	620K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK6014DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK6014DFN

DFN5x6-8(PDFNWB5x6-8L)

Ƶ Features

ƽ VDS (V) = 60 V

ID = 95 A

ƽ RDS(ON) (at VGS = 10 V) < 2.5 mȍ

ƽ RDS(ON) (at VGS = 4.5 V) < 3.4 mȍ

Ƶ Absolute Maximum Ratings (T

= 25ć un

ess o

erw

se no

)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

= 25

Continuous Drain Current ^A

= 100ć

Pulsed Drain Current

IDM

390

Single Pulse Avalanche Energy

Power Dissipation ^D

500

120

Thermal Resistance, Junction- to-Ambient

Thermal Resistance, Junction- to-Case

Junction Temperature

ɽJA

ɽJC

ć/W

1.04

150

Storage Temperature Range

Notes:

Tstg

-55 to 150

A. The maximum current rating is package limited.

B. Repetitive rating; pulse width limited by max. junction temperature.

C. VDD=50 V, RG=25 ɏ, L=0.5mH, starting Tj=25 ć.

D. P is based on max. junction temperature, using junction-case thermal resistance.

E.The value of R©JA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment

with Ta=25 ć.

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