Datasheet > 2KK6012DFN

2KK6012DFN

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	194K
描述
Dual N-MOSFETs

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中文翻译

获取价格

数据手册

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2KK6012DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK6012DFN

PDFN3.3x3.3-8-B

Ƶ Features

Top View

Bottom View

ƽ VDS (V) = 30 V

IDMAX = 40 A

ƽ RDS(ON) (at VGS = 10 V) = 8.6 mȍ

ƽ RDS(ON) (at VGS = 4.5 V) = 10.7 mȍ

ƽ High Power and current handing capability

Pin 1

Top View

Ƶ Absolute Maximum Ratings (T

= 25ć unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

40^{a, e}

_C= 25 °C

_C= 70 °C

35^e

Continuous Drain Current (T_J= 175 °C)

I_D

19^{b, c}

16.8^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_AS

Pulsed Drain Current

120

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

53.2

40^{a, e}

21^{b, c}

I_S

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

31.2

P_D

Maximum Power Dissipation

3.55^{b, c}

2.13^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

Ƶ Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤10 s

°C/W

R_thJC

Maximum Junction-to-Case

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 10 A.

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