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2KK6008DFN PDF预览

2KK6008DFN

更新时间: 2024-10-15 18:10:07
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 492K
描述
N-Channel MOSFET

2KK6008DFN 数据手册

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SMD Type  
MOSFET  
N-Channel MOSFET  
2KK6008DFN  
PDFN3.3x3.3-8  
Top View  
Bottom View  
Ƶ Features  
ƽ VDS (V) = 30 V  
ƽ
ID = 45 A  
ƽ RDS(ON) (at VGS = 10 V) < 5 mȍ  
ƽ RDS(ON) (at VGS = 4.5 V) < 6.5 mȍ  
Pin 1  
Top View  
S
D
D
D
D
1
2
3
4
8
7
6
5
S
S
G
Ƶ Absolute Maximum Ratings (T  
A
= 25ć unless otherwise noted)  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
Unit  
V
V
V
DS  
GS  
30  
±20  
45  
Gate-Source Voltage  
T
A
=25ć  
Continuous Drain Current (Note 1, 3)  
Pulsed Drain Current (Note 2)  
Power Dissipation  
ID  
A
TA  
=100ć  
36  
IDM  
140  
25  
TA  
=25ć  
P
D
W
TA  
=100ć  
9
Junction Temperature  
Storage Temperature Range  
Notes:  
T
J
150  
-55 to 150  
ć
Tstg  
1. The value of RșJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with  
=25°C. The value in any givenapplication depends on the user's specific board design.  
TA  
2. Repetitive rating, pulse width limited by junction temperature.  
3. The current rating is based on the tİ 10s junction to ambient thermal resistance rating.  
1
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