Datasheet > 2KK6007DFN

2KK6007DFN

更新时间： 2024-11-18 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	345K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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2KK6007DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK6007DFN

DFN5x6-8(PDFNWB5x6-8L)

Ƶ Features

ƽ VDS (V) = 100 V

ID (at VGS = 10 V) =53 A

ƽ RDS(ON) (at VGS = 10 V) < 7.4 mȍ

ƽ RDS(ON) (at VGS = 4.5 V) < 9.1 mȍ

Ƶ Absolute Maximum Ratings (T = 25ć unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

100

±20

Unit

Gate-Source Voltage

=25ć (Silicon Limited)

=25ć (Package Limited)

=100ć (Silicon Limited)

=25ć

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

Power Dissipation

212

119

=25ć

=100ć

=25ć

5.5

Single Pulse Avalanche Energy (Note 3)

Thermal Resistance, Junction-to-Ambient (Note 1)

Thermal Resistance.Junction- to-Case

Junction Temperature

ɽJA

ɽJC

22.7

1.05

150

-55 to 150

ć/W

Storage Temperature Range

stg

Notes:

1. Surface mounted FR-4 board

2. Pulse width limited by Tjmax

3. EAS is tested at starting Tj = 25ć, L = 1.0mH, IAS = 13A, VDD = 50V, VGS = 10V

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