Datasheet > 2KK6005DFN

2KK6005DFN

更新时间： 2024-11-18 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	971K
描述
Dual N-MOSFETs

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中文翻译

获取价格

数据手册

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2KK6005DFN 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

2KK6005DFN

PDFN5x6-8

■ Features

● VDS (V) = 60 V

●

IDMAX (at VGS = 10 V) =7.8 A

● RDS(ON) (at VGS = 10 V) = 22.5 mΩ (Typ.)

Top View

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Symbol

V_GS

Parameter

Value

Unit

Gate-source voltage

Drain-source voltage

±20

V_DS

(1)

I_D

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (continuous) at T_pcb= 25 °C

Drain current (continuous) at T_pcb= 100 °C

Drain current (pulsed)

I_D

7.8

5.5

31.2

(2)

I_D

(2)(3)

I_DM

P_TOT

Total dissipation at T_C= 25 °C

(2)

P_TOT

Total dissipation at T_pcb= 25 °C

Non-repetitive avalanche current

Single pulse avalanche energy

4.3

7.8

190

2.3

I_AV

(4)

E_AS

R_thj-case

Thermal resistance junction-case

°C/W

(1)

R_thj-pcb

Thermal resistance junction-pcb

T_j

Operating junction temperature range

°C

-55 to 175

T_stg

Storage temperature range

Notes:

⁽¹⁾Current is limited by bonding, with R_thJC= 2.3 °C/W; the chip is able to carry 30 A at 25 °C.

⁽²⁾When mounted on an 1 inch² 2 Oz. Cu board, t < 10 s

⁽³⁾Pulse width is limited by safe operating area.

⁽⁴⁾Starting T_J= 25 °C, I_D= I_AS, V_DD= 25 V

⁽⁵⁾When mounted on an 1 inch² 2 Oz. Cu board, t < 10 s

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