SMD Type
MOSFET
T
N-Channel MOSFET
2KK6004DFN
Ƶ Features
DFN5x6-8(PDFNWB5x6-8L)
ƽ VDS (V) = 200 V
ƽ
IDMAX (at VGS = 10 V) = 20.2 A
ƽ RDS(ON) (at VGS = 10 V) < 50.5 mȍ
ƽ RDS(ON) (at VGS = 7.5 V) < 53.5 mȍ
S
D
D
D
D
S
S
G
Ƶ Absolute Maximum Ratings (T = 25ć unless otherwise noted)
A
PARAMETER
SYMBOL
LIMIT
200
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
± 20
20.2
16.1
6.2 b, c
5.0 b, c
50
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
Pulsed Drain Current (t = 100 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
24
4.5 b, c
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
20
L = 0.1 mH
EAS
20
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
52
33
Maximum Power Dissipation
PD
5 b, c
3.2 b, c
-55 to +150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d, e
TJ, Tstg
°C
Ƶ Thermal resistance ratings
PARAMETER
SYMBOL
RthJA
TYPICAL
20
MAXIMUM
UNIT
°C/W
b, f
Maximum Junction-to-Ambient
t ≤10 s
25
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
(not plated) as a result of the singulation process in
This is a leadless package. The end of the lead terminal is exposed copper
d.
required to ensure adequate bottom
nteed and is not
manufacturing. A solder fillet at the exposed copper tip cannot be guara
side solder
interconnection.
e. Rework conditions: manual soldering with a solderin g iron is not recommended for leadless components.
f. Maximum under steady stat e conditions is 65 °C/W.
g. TC = 25 °C.
1
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