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2KK5120DFN PDF预览

2KK5120DFN

更新时间: 2024-11-18 18:10:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 411K
描述
N-Channel MOSFET

2KK5120DFN 数据手册

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SMD Type  
MSFET  
N-Channel MOSFET  
2KK5120DFN  
Features  
PDFN5x6-8  
VDS (V) = 40 V  
ID  
= 150 A  
RDS(ON) (at VGS = 10 V) < 1.8 mΩ  
S
D
D
D
S
S
G
Absolute Maximum Ratings (T  
C
= 25nlesotherwinoted)  
Parameter  
Symbol  
Rating  
40  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
±20  
T
C
= 25℃  
150  
Continuous Drain Current  
ID  
A
C  
= 100℃  
100  
Pulsed Drain Current (Note 1)  
Power Dissipation  
I
DM  
560  
92.6  
0.74  
450  
W
W/℃  
mJ  
P
D
Power Dissipation – Derate above 25℃  
Single Pulse Avalanche Energy (Note 2)  
E
AS  
Single Pulse Avalanche Current (Note 2)  
IAS  
30  
A
Thermal Resistance, Junction- to-Ambient  
Thermal Resistance, Junction- to-Case  
Junction Temperature  
R
θJA  
θJC  
62  
/W  
R
1.35  
150  
T
J
Storage Temperature Range  
Notes:  
T
stg  
-55 to 150  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. EAS condition : T=25,VDD=25V,V =10V,L=1mH,,IAS=30A  
j
G
1

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