Datasheet > 2KK5119DFN

2KK5119DFN

更新时间： 2024-11-18 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	265K
描述
Dual N-MOSFETs

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中文翻译

获取价格

数据手册

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2KK5119DFN 数据手册

SMD Type

MOSFET

Dual N-Channel MOSFET

2KK5119DFN

PDFN3.3x3.3-8A

Top View

Bottom View

■ Features

● VDS (V) = 30 V

●

ID = 40 A

● RDS(ON) (at VGS = 10 V) < 12 mΩ

● RDS(ON) (at VGS = 4.5 V) < 18 mΩ

Pin 1

Top View

■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

=25℃

Continuous Drain Current (Note 1, 3)

Pulsed Drain Current (Note 2)

Power Dissipation

=100℃

IDM

120

=25℃

=100℃

Junction Temperature

Storage Temperature Range

Notes:

150

℃

Tstg

-55 to 150

1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with T =25°C. The value in any givenapplication depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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