Datasheet > 2KK5117

2KK5117

更新时间： 2024-11-18 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	266K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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2KK5117 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5117

SOP-8

■ Features

● VDS = 30 V

●

ID (at VGS=10V) = 20 A

● RDS(ON) (at VGS = 10 V) < 5.3 mΩ

● RDS(ON) (at VGS = 4.5 V) < 9 mΩ

● 100% EAS Guaranteed

0.15

1.50

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

● Super Low Gate Charge

● Excellent CdV/dt effect decline

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

= 25℃

= 70℃

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

Avalanche Current

Avalanche Energy (Note 3)

105.8

℃/W

Thermal Resistance, Junction- to-Ambient (Note 1)

Thermal Resistance, Junction- to-Case (Note 1)

Power Dissipation (Note 4)

θJA

θJL

1.5

Junction Temperature

150

-55 to 150

℃

Storage Temperature Range

Notes:

Tstg

1.The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=46A

4. The power dissipation is limited by 150℃ junction temperature.

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