Datasheet > 2KK5115DFN

2KK5115DFN

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
7页	286K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5115DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5115DFN

DFN5x6-8

■ Features

● VDS (V) = 60 V

●

IDMAX = 80 A

● RDS(ON) < 7.5mΩ @ VGS=10V

● RDS(ON) < 9.5mΩ @ VGS=4.5V

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

=25℃

=100℃

=25℃

=100℃

=25℃

Continuous Drain Current

Pulsed Drain Current (Note 1)

IDM

200

Diode Continuous Forward Current

Avalanche Current, Single pulse (L=0.5mH) (Note 2)

Avalanche Energy, Single pulse (L=0.5mH) (Note 2)

100

=25℃

=100℃

=25℃

=100℃

Power Dissipation

20.8

Power Dissipation

1.3

2.4

Thermal Resistance.Junction- to-Case

Thermal Resistance.Junction- to-Ambient (Note 3)

Steady State

t ≤ 10s

θJC

θJA

℃/W

Steady State

Junction Temperature

150

-55 to 150

℃

Storage Temperature Range

Tstg

Notes 1. Pulse width limited by max. junction temperature.

2. UIS tested and pulse width limited by maximum junction temperature 150℃(initial temperature T

3. Surface Mounted on 1in²pad area.

=25℃).

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