Datasheet > 2KK5113

2KK5113

更新时间： 2024-11-18 18:09:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	343K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5113 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5113

TO-252

■Features

● V^{DS (V)}= 650 V

● I

D = 11 A

● RDS(ON) ＜360mΩ @ VGS = 10V

● Low FOM RDS(ON) X Q

● Better EMI

● 100% UIS tested

1. Gate (G)

2. Drain (D)

3. Source (S)

■Applications

● Switch Mode Power Supply (SMPS)

● Uninterruptible Power Supply (UPS)

● Power Factor Correction (PFC)

■Absolute Maximum Ratings (T

A=25℃unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

650

±30

Unit

Gate-Source Voltage

=25℃

Drain Current - Continuous ^{(Note 1)}

Drain Current - Pulsed ^{(Note 2)}

C=100℃

Single Pulsed Avalanche Energy ^{(Note 3)}

MOSFET d /d ruggedness

Reverse diode d /d

V/ns

130

dv/dt

Power Dissipation

C=25℃

Thermal Resistance, Junction- to-Ambient ^{(Note 4)}

Thermal Resistance, Junction- to-Case

Operating and Storage Temperature Range

Notes:

θJA

θJC

62.5

5.4

℃/W

stg

-55 to 150

℃

1. The max drain current limited by maximum junction temperature

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 10 mH, V^DD= 150V, IAS = 4A, RG = 25 Ω, Starting TJ = 25 °C

4. Mount on minimum PCB layout

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