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2KK5103 PDF预览

2KK5103

更新时间: 2024-11-18 18:09:35
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
6页 424K
描述
N-Channel MOSFET

2KK5103 数据手册

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SMD Type  
MSFET  
N-Channel MOSFET  
2KK5103  
TO-252  
Features  
VDS = 700 V  
3
2
I
D
= 7 A  
RDS(ON) (at VGS = 10 V) < 0.6 Ω  
Q (typ.) = 13 nC  
100% avalanche tested  
1
g
D
1. Gate (G)  
2. Drain (D)  
3. Source (S)  
G
S
Absolute Maximum Ratings (TC = 25less otherwinoted)  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
Unit  
V
V
V
DS  
GS  
700  
±30  
7
Gate-Source Voltage  
T
C
= 25℃  
Continuous Drain Current  
ID  
A
mJ  
A
TC  
= 100℃  
4.2  
Pulsed Drain Current (Note 1)  
Single Pulse Avalanche Energy (Note 2)  
Repetitive Avalanche Energy (Note 2)  
Avalanche Current  
IDM  
21  
E
E
AS  
AR  
142  
0.21  
1.3  
IAR  
Continuous Body Diode Current  
Pulsed Diode Forward Current (Note 1)  
Thermal Resistance, Junction- to-Ambient  
Thermal Resistance, Junction- to-Case  
Power Dissipation  
IS  
6
ISM  
21  
R
θJA  
θJC  
62  
/W  
W
R
2.0  
P
D
150  
150  
-55 to 150  
Junction Temperature  
TJ  
Storage Temperature Range  
Notes:  
Tstg  
1. Repetitive Rating: Pulse width limited by maximum junction temperature  
2. IAS = 2.4A, VDD = 50V, R = 25, Starting T = 25°C  
G
J
1
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