Datasheet > 2KK5102DFN

2KK5102DFN

更新时间： 2024-11-18 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	339K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5102DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5102DFN

PDFN5x6-8

■ Features

● VDS (V) = 80 V

●

ID = 160 A

● RDS(ON) (at VGS = 10 V) < 2.7 mΩ

● RDS(ON) (at VGS = 4.5 V) < 3.3 mΩ

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

160

113

167

= 25℃

Continuous Drain Current

Power Dissipation

= 100℃

TC = 25℃

= 100℃

= 25℃

Continuous Drain Current

Power Dissipation

= 100℃

= 25℃

3.8

= 100℃

= 25℃, t

1.9

Pulsed Drain Current (Note 1)

Source Current (Body Diode)

=10μs

IDM

900

139

706

Single Pulse Avalanche Energy (Note 2)

Thermal Resistance.Junction- to-Ambient (Note 3)

Thermal Resistance.Junction- to-Case

Junction Temperature

θJA

θJC

℃/W

0.9

150

-55 to 150

℃

Storage Temperature Range

Notes:

Tstg

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. EAS condition : IL(pk)=12.2A

3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.

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