SMD Type
MOSFET
N-Channel MOSFET
2KK5099
Ƶ Features
SOT-723
Unit:mm
ƽ Low on-resistance.
ƽ Fast switching speed.
ƽ Low voltage drive (2.5V) makes this
device ideal for portable equipment.
ƽ Easily designed drive circuits.
ƽ Easy to parallel.
1
3
Drain
2
0.80 ± 0.05
1.20 ± 0.05
0.50 (max)
Gate
7° REF.
Gate
Protection
Source
Diode
1. Gate
2. Source
3. Drain
7° REF.
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter
Drain-Source Voltage
Symbol
Rating
30
Unit
V
VDS
GS
Gate-Source Voltage
V
f20
Continuous Drain Current
Continuous Drain Current Pulsed *1
ID
f100
f400
150
mA
mW
ć
I
DP
Power Dissipation
*2
PD
Junction Temperature
Storage Temperature Range
TJ
150
T
stg
-55 to 150
*1 Pwİ10ȝs, Duty cycleİ1%
*2 With each pin mounted on the recommended lands.
Ƶ Electrical Characteristics Ta = 25ć
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
Test Conditions
Min
30
Typ
Max
Unit
V
DSS
DSS
GSS
GS(th)
V
uA
uA
V
I
D
=100A, VGS=0V
DS=30V, VGS=0V
DS=0V, VGS=f20V
I
V
V
V
V
V
V
1
f1
1.5
8
I
V
0.8
20
DS=VGS , I
GS=4V, I =10mA
GS=2.5V, I =1mA
DS=3V, I
=10mA
D=100A
D
5
7
Static Drain-Source On-Resistance
R
DS(O
n
|
)
¡
D
13
Forward Transfer admittance
Input Capacitance
| Yfs
iss
D
mS
C
13
9
V
GS=0V, VDS=5V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
C
oss
rss
d(on)
C
4
t
15
35
80
80
V
GS=5V, VDS=5V, R
L
=500¡,RGEN=10¡
Turn-On Rise Time
tr
ns
ꢀ
Turn-Off DelayTime
td(off)
ID=10mA
Turn-Off Fall Time
tf
Ƶ Marking
Marking
KN
1
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