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2KK5099 PDF预览

2KK5099

更新时间: 2024-11-20 18:10:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 279K
描述
N-Channel MOSFET

2KK5099 数据手册

 浏览型号2KK5099的Datasheet PDF文件第2页浏览型号2KK5099的Datasheet PDF文件第3页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2KK5099  
Ƶ Features  
SOT-723  
Unit:mm  
ƽ Low on-resistance.  
ƽ Fast switching speed.  
ƽ Low voltage drive (2.5V) makes this  
device ideal for portable equipment.  
ƽ Easily designed drive circuits.  
ƽ Easy to parallel.  
1
3
Drain  
2
0.80 ± 0.05  
1.20 ± 0.05  
0.50 (max)  
Gate  
7° REF.  
Gate  
Protection  
Source  
Diode  
1. Gate  
2. Source  
3. Drain  
7° REF.  
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
30  
Unit  
V
VDS  
GS  
Gate-Source Voltage  
V
f20  
Continuous Drain Current  
Continuous Drain Current Pulsed *1  
ID  
f100  
f400  
150  
mA  
mW  
ć
I
DP  
Power Dissipation  
*2  
PD  
Junction Temperature  
Storage Temperature Range  
TJ  
150  
T
stg  
-55 to 150  
*1 Pwİ10ȝs, Duty cycleİ1%  
*2 With each pin mounted on the recommended lands.  
Ƶ Electrical Characteristics Ta = 25ć  
Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
Gate Threshold Voltage  
Symbol  
Test Conditions  
Min  
30  
Typ  
Max  
Unit  
V
DSS  
DSS  
GSS  
GS(th)  
V
uA  
uA  
V
I
D
=100­A, VGS=0V  
DS=30V, VGS=0V  
DS=0V, VGS=f20V  
I
V
V
V
V
V
V
1
f1  
1.5  
8
I
V
0.8  
20  
DS=VGS , I  
GS=4V, I =10mA  
GS=2.5V, I =1mA  
DS=3V, I  
=10mA  
D=100­A  
D
5
7
Static Drain-Source On-Resistance  
R
DS(O  
n
|
)
¡
D
13  
Forward Transfer admittance  
Input Capacitance  
| Yfs  
iss  
D
mS  
C
13  
9
V
GS=0V, VDS=5V, f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On DelayTime  
C
oss  
rss  
d(on)  
C
4
t
15  
35  
80  
80  
V
GS=5V, VDS=5V, R  
L
=500¡,RGEN=10¡  
Turn-On Rise Time  
tr  
ns  
Turn-Off DelayTime  
td(off)  
ID=10mA  
Turn-Off Fall Time  
tf  
Ƶ Marking  
Marking  
KN  
1
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