Datasheet > 2KK5097DFN

2KK5097DFN

更新时间： 2024-10-15 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	272K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5097DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5097DFN

PDFN3.3x3.3-8

Top View

Bottom View

■ Features

● VDS (V) = 150V

● ID = 17 A

● RDS(ON) = 54mΩ (VGS = 10V)

● RDS(ON) = 66mΩ (VGS = 6V)

Pin 1

Top View

■ Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Symbol

Rating

150

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

=25℃

Continuous Drain Current

Pulsed Drain Current (Note 3)

Continuous Drain Current

=100℃

=25℃

5.5

4.5

IDSM

TA=70℃

Single Pulse Avalanche Current (Note 3)

Single Pulse Avalanche Energy (Note 3)

L=0.3mH

=25℃

=100℃

=25℃

=70℃

Power Dissipation (Note 2)

Power Dissipation (Note 1)

15.5

4.1

2.6

DSM

Thermal Resistance.Junction- to-Ambient (Note 1)

Thermal Resistance.Junction- to-Case

Junction Temperature

t≤10s

θJA

θJC

℃/W

Steady state

3.2

150

℃

Storage Temperature Range

Notes:

stg

-55 to 150

1.The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment

with TA =25°C.The Power dissipation PDSM is based on RθJA (t≤ 10s) and the maximum allowed junction temperature

of 150°C. The value in any given application depends on the user's specific board design.

2.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

3.Single pulse width limited by junction temperature TJ(MAX)=150°C.

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