Datasheet > 2KK5096DFN

2KK5096DFN

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	591K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5096DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5096DFN

PDFN5x6-8

■ Features

● VDS (V) = 40 V

●

ID = 100 A

● R^DS(ON)(at V^GS= 10 V) < 3.5 mΩ

● RDS(ON) (at VGS = 4.5 V) < 5.3 mΩ

● Split Gate Trench Technology

● Low Gate Charge

● Low Gate Resistance

S 1

S 2

S 3

● 100% UIS Tested

■ Absolute Maximum Ratings (TC = 25℃ unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

100

= 25℃

Continuous Drain Current

Pulsed Drain Current (Note 1)

Power Dissipation

= 100℃

400

= 25℃

2.5

Single Pulse Avalanche Current (Note 2)

Single Pulse Avalanche Energy (Note 2)

Thermal Resistance, Junction- to-Ambient

Thermal Resistance, Junction- to-Case

Junction Temperature

θJA

θJC

℃/W

1.8

150

-55 to 150

℃

Storage Temperature Range

Notes:

stg

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. EAS condition : T=25℃,VDD=25V,V =10V,L=1mH,,IAS=30A

12 3 4 5

中文翻译

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