Datasheet > 2KK5089DFN

2KK5089DFN

更新时间： 2024-11-22 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	436K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5089DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5089DFN

DFN2X2-6

■Features

● VDS = 30 V

●

ID = 10 A

● Low RDS(on) trench technology

● Fast Switching Speed

● Low Thermal Impedance

● ESD Protected Gate

DFN2X2-6 bottom view

■Absolute Maximum Ratings (T

= 25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

±8

Gate-Source Voltage

=25℃

=70℃

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

Avalanche Current

Avalanche Energy L = 0.1 mH

=25℃

=70℃

Power Dissipation (Note 1)

1.3

(Note 1)

(Note 3)

62.5

141

150

-55 to 150

Thermal Resistance, Junction- to-Ambient

R_θJA

℃/W

Operating Junction Temperature

Storage Temperature Range

Notes:

℃

Tstg

1. Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.

2. Pulse width limited by maximum junction temperature.

3. Surface−mounted on FR4 board using the minimum recommended pad size.

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