SMD Type
MOSFET
N-Channel MOSFET
2KK5076DFN
PDFN5x6-8(PDFNWB5x6-8L)
■ Features
● VDS = 80 V
●
ID (at VGS=10V) = 48 A
● RDS(ON) (at VGS = 10 V) < 6.5 mΩ
● RDS(ON) (at VGS = 4.5 V) < 8.5 mΩ
● 100% UIS Tested
S
D
D
D
D
● 100% Rg Tested
S
S
G
■ Absolute Maximum Ratings (T
A
= 25℃ unless otherwise noted)
Parameter
Symbol
Rating
80
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
V
DS
GS
±20
48
T
C
= 25℃
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Continuous Drain Current
ID
A
TC
= 100℃
42.5
170
20
IDM
TA
= 25℃
= 70℃
IDSM
TA
16
Avalanche Current (Note 2)
IAS
40
A
Avalanche Energy L = 0.1mH (Note 2)
E
AS
80
mJ
Thermal Resistance, Junction- to-Ambient (Note 3, 5)
Thermal Resistance, Junction- to-Case
R
θJA
θJC
55
℃/W
W
R
2.2
T
C
= 25℃
= 100℃
= 25℃
= 70℃
56
Power Dissipation (Note 4)
Power Dissipation (Note 5)
PD
TC
22
TA
5.0
P
DSM
T
A
3.2
Junction Temperature
T
J
150
-55 to 150
℃
Storage Temperature Range
Notes:
Tstg
1. The maximum current rating is package limited.
2. Single pulse width limited by junction temperature TJ(MAX)=150°C.
3. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
4. The power dissipation P is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
D
setting the upper dissipation limit for cases where additional heatsinking is used.
5. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA
=25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C.
The value in any given application depends on the user's specific board design.
1
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