Datasheet > 2KK5069

2KK5069

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	269K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5069 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5069

SOT-523

Uni t: mm

0.15±0.05

+0.1

- 0.1

1.6

1.0

+0.

- 0.

+0.05

-0.05

0.2

Ƶ Features

ƽ VDS (V) = 60V

ƽ ID = 350mA

Drain

ƽ RDS(ON) = 1.5¡ (typ.) @ (VGS = 10V)

ƽ RDS(ON) =2.0¡ (typ.) @ (VGS = 5V)

ƽ ESD Protected : HBM≥2KV

0.3±0.05

+0.

0.5

- 0.

Gate

1. Gate

2. Source

3. Drain

Protection

Diode

Source

Absolute Maximum Ratings Ta = 25ć

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

f20

350

Continuous Drain Current

Power Dissipation

ć/W

150

Thermal Resistance.Junction- to-Ambient

Junction Temperature

RthJA

833

150

Storage Temperature Range

stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Symbol

Test Conditions

Min

Typ

Max

Unit

DSS

=250A, VGS=0V

^DS=60V, V^GS=0V

DS=0V, VGS=f20V

DSS

GSS

2.0

3.0

µA

GS(th)

DS=VGS , I

=250A

=100mA

=50mA

^GS=10V, V^DS=7V

DS=10V, I =0.2A

GS=10V, I

1.5

2.0

Static Drain-Source On-Resistance

RDS(O

GS=5V, I

On State Drain Current

Forward Transconductance

Input Capacitance

D(ON)

iss

oss

rss

500

GS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

d(on)

d(off)

^DD= 25V, I

D = 0.5A, V^GEN= 10V

= 50Ω, R^GEN= 25Ω

Turn-Off DelayTime

GS=10V, I

GS=5V, I

Is=350mA, VGS=0 V

D=100mA

3.75

0.5

1.2

Drain-source on-voltage

Diode Forward Voltage

VDS(on)

D=50mA

0.55

Ƶ Marking

Marking

K72

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