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2KK5052 PDF预览

2KK5052

更新时间: 2024-11-22 18:09:55
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 561K
描述
N-Channel MOSFET

2KK5052 数据手册

 浏览型号2KK5052的Datasheet PDF文件第2页浏览型号2KK5052的Datasheet PDF文件第3页浏览型号2KK5052的Datasheet PDF文件第4页浏览型号2KK5052的Datasheet PDF文件第5页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2KK5052  
TO-252  
Ƶ Features  
ƽ VDS (V) = 200 V  
ƽ
ID = 18 A  
ƽ RDS(ON) (at VGS = 10 V) <150 mȍ  
ƽ Low gate charge  
ƽ Low Crss (typical 25pF )  
ƽ Fast switching  
ƽ 100% avalanche tested  
ƽ Improved dv/dt capability  
Ƶ Absolute Maximum Ratings (T  
C
= 25ć unless otherwise noted)  
Parameter  
Symbol  
Rating  
200  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
±30  
T
C
= 25ć  
18  
Continuous Drain Current (Note 1)  
ID  
A
TC  
= 100ć  
16  
Pulsed Drain Current (Note 1)  
I
DM  
AS  
AR  
AR  
72  
Single Pulse Avalanche Energy (Note 2)  
E
259  
mJ  
A
Avalanche Current˄Note 1˅  
I
18  
Repetitive Avalanche Current˄Note 1˅  
Peak Diode Recovery dv/dt˄Note 3˅  
Power Dissipation  
E
14  
mJ  
V/ns  
W
dv/dt  
5.5  
P
D
140  
Thermal Resistance, Junction- to-Case  
R
ɽJC  
ɽJA  
0.89  
62.5  
150  
ć/W  
Thermal Resistance, Junction- to-Ambient  
Junction Temperature  
R
T
J
ć
Storage Temperature Range  
Notes:  
T
stg  
-55 to 150  
1. Drain current limited by maximum junction temperature  
2. L=1.6mH, IAS=18A, VDD=50V, R =25 ,Starting T =25ć  
3. ISD İ18A,di/dt İ200A/­s,VDDİBVDSS, Starting T =25ć  
G
J
J
1
www.kexin.com.cn  

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