Datasheet > 2KK5050DFN

2KK5050DFN

更新时间： 2024-10-15 18:09:35

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描述
N-Channel MOSFET

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中文翻译

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数据手册

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2KK5050DFN 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2KK5050DFN

DFN5x6-8(PDFNWB5x6-8L)

Ƶ Features

ƽ VDS (V) = 40 V

ID = 110 A

ƽ RDS(ON) = 2.4 mȍ (typ.) @ VGS=10V

ƽ RDS(ON) = 3.3 mȍ (typ.) @ VGS=4.5V

Ƶ Absolute Maximum Ratings (T

= 25ć unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

= 25ć

110

Continuous Drain Current

= 100ć

77.8

340

Pulsed Drain Current (Note 1)

Power Dissipation

Power Dissipation – Derate above 25ć

0.6

W/ć

Single Pulse Avalanche Energy (Note 2)

500

Thermal Resistance, Junction- to-Case (Note 3)

Junction Temperature

ć/W

ɽJC

1.67

150

Storage Temperature Range

Notes:

stg

-55 to 150

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. EAS condition : T =25ć,VDD=20V,V =10V,L=0.5mH, R =25ɏ

3. Surface Mounted on FR4 Board, t İ 10 sec.

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