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2KK5045 PDF预览

2KK5045

更新时间: 2024-11-19 18:09:19
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
4页 187K
描述
N-Channel MOSFET

2KK5045 数据手册

 浏览型号2KK5045的Datasheet PDF文件第2页浏览型号2KK5045的Datasheet PDF文件第3页浏览型号2KK5045的Datasheet PDF文件第4页 
SMD Type  
MOSFET  
N-Channel MOSFET  
2KK5045  
TO-252  
Unit:mm  
+0. 15  
-0. 15  
Ƶ Features  
6. 50  
+0. 1  
-0. 1  
2. 30  
+0. 2  
5. 30  
-0. 2  
+0. 08  
0. 50  
-0.07  
ƽ VDS (V) = 100 V  
ƽ
ID = 41 A  
ƽ RDS(ON) (at VGS = 10 V) < 20 mȍ  
ƽ RDS(ON) (at VGS = 4.5 V) < 23 mȍ  
0. 127  
max  
+0. 1  
-0. 1  
0. 80  
0. 60+- 0. 1  
1Gate  
2. 3  
0. 1  
+0. 15  
-0. 15  
4.60  
2Drain  
3Source  
Ƶ Absolute Maximum Ratings (T  
J
= 25ć unless otherwise noted)  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
100  
±20  
41  
T
C
= 25ć  
Continuous Drain Current (Note 1)  
Pulsed Drain Current (Note 1)  
Power Dissipation (Note 1,2)  
ID  
A
TC  
= 100ć  
29  
I
DM  
238  
3.9  
T
C
= 25ć  
P
D
W
mJ  
TC  
= 100ć  
1.9  
Single Pulse Avalanche Energy (Note 3)  
Thermal Resistance, Junction- to-Case  
E
AS  
80  
R
ɽJC  
ɽJA  
1.7  
ć/W  
Thermal Resistance, Junction- to-Ambient  
Junction Temperature  
R
39  
TJ  
150  
-55 to 150  
ć
Storage Temperature Range  
Notes:  
T
stg  
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only  
valid for the particular conditions noted.  
2. Surfaceímounted on FR4 board using a 650 mm2, 2 oz. Cu pad.  
3. TJ = 25°C, VGS = 10 V, IL(pk) = 40 A, L = 0.1 mH, RG = 25ɏ  
1
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