SMD Type
MOSFET
T
N-Channel MOSFET
2KK5035DFN
DFN5x6-8(PDFNWB5x6-8L)
Ƶ Features
ƽ VDS (V) = 150V
ƽ ID = 30 A
ƽ RDS(ON) İ 38m¡ (VGS = 10V)
(D) (D) (D)
(D)
5
8
7
6
1
2
3
4
(S) (S) (S) (G)
Ƶ Absolute Maximum Ratings (T
A
= 25ć unless otherwise noted)
Parameter
Symbol
Rating
150
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
GS
V
±20
30 a
T
T
T
T
C
=25ć
=70ć
26
C
I
D
Continuous Drain Current (T
Pulsed Drain Current
J=150ć)
7.7 b,c
6.2 b,c
60
A
A
=25ć
=70ć
A
I
DM
30 a
4.5 b,c
30
T
C=25ć
Continuous Source-Drain Diode Current
IS
TA
=25ć
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
L=0.1mH
EAS
45
mJ
W
96
T
T
T
T
C
=25ć
=70ć
62
C
Maximum Power Dissipation
PD
5.4 b,c
3.5 b,c
23
A
A
=25ć
=70ć
Thermal Resistance.Junction- to-Ambient b,f
Thermal Resistance.Junction- to-Case (Drain)
RthJA
thJC
tİ10s
ć/W
Steady state
R
1.3
Soldering Recommendations (Peak Temperature) d,e
260
Junction Temperature
TJ
150
ć
Storage Temperature Range
Tstg
-55 to 150
Notes: a.Package limited.
b.Surface Mounted on 1" x 1" FR4 board.
c.t = 10 s.
d.The DFN5X6-8 is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guararequired to ensure
adequate bottom side solder interconnection.
e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.Maximum under Steady State conditions is 65 °C/W.
1
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