Datasheet > 2KK5009

2KK5009

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	302K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2KK5009 数据手册

SMD Type

MOSFET

N-Channel Enhancement MOSFET

Features

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected 2KV HBM

Absolute Maximum Ratings Ta=25

Parameter

Symbol

V^DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage -Continuous

V^GS

±20

Drain Current

-Continuous ( Note:1)

-Pulsed

440

I^D

1000

530

Power Dissipation

(Note 1)

P^D

R^thJA

T^J

Thermal Resistance.Junction- to-Ambient

Junction Temperature

232

150

Storage Temperature Range

T^stg

-55 to 150

Device mounted on FR-4 PCB using 1 square inch pad size, 1oz copper.

Notes: 1.

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

D=100 A, VGS=0V

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage (Note.2)

Zero Gate Voltage Drain Current (Note.2)

DSS

GSS

GS(th)

DS=60V, VGS=0V

DS=0V, VGS=±20V

Gate-Body Leakage Current

Gate Threshold Voltage

(Note.2)

1.4

1.7

2.0

2.6

DS=VGS , I

GS=10V, I

V, I

GS=10V, I

=250

=500mA

Static Drain-Source On-Resistance (Note.2)

RDS(On)

GS=

D= 0 mA

Forward Transfer Admittance

Input Capacitance

(Note.2)

| Yfs |

iss

=200mA

GS=0V, VDS=25V, f=1MHz

Output Capacitance

oss

rss

Reverse Transfer Capacitance

Total Gate Charge

GS=4.5V, VDS=15V, I

=200mA, VDS=30V,

D=200mA

0.8

Turn-On DelayTime

d(on)

d(off)

RG=10 ,VGEN=10V,RL=150

Turn-Off DelayTime

Note: 2.

Short duration test pulse used to minimize self-heating effect.

Marking

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