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2KJ7116DFN PDF预览

2KJ7116DFN

更新时间: 2024-11-18 18:09:59
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 747K
描述
P-Channel MOSFET

2KJ7116DFN 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
2KJ7116DFN  
PDFN5x6-8  
Ƶ Features  
ƽ VDS  
-30V  
-75A  
ƽ ID  
ƽ RDS(ON) (at VGS =-10V)  
= 5.3mȍ(Typ.)  
ƽ RDS(ON) (at VGS =-4.5V) = 8.4mȍ(Typ.)  
D
1
2
3
4
8
7
6
5
G
S
Ƶ Absolute Maximum Ratings (  
TA = 25ć unless otherwise noted.)  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
V
DS  
-30  
±20  
V
GS  
T
C
=25ć  
I
D
-75  
A
TC  
=25ć  
I
DM  
-300  
122  
Single Pulsed Avalanche Energy (Note 1)  
Power Dissipation  
E
AS  
mJ  
W
TC  
=25ć  
45  
P
D
Power Dissipation  
TA  
=25ć  
4.2  
Thermal Resistance, Junction- to-Ambient (Note 2)  
Thermal Resistance, Junction- to-Case (Note 2)  
Junction Temperature  
R
ɽJA  
ɽJC  
30  
ć/W  
R
2.8  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
260  
ć
Lead Temperature for Soldering Purposes (1/8’’ from case for 10s)  
TL  
Notes 1. EAS condition: L=0.5mH, RG=25, IAS = -20A, VGS =-10V. Starting TJ = 25°C  
2. Mounted on a glass epoxy board of 50 mm x 50 mm x 0.8 mm  
1
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