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2KJ7115DFN PDF预览

2KJ7115DFN

更新时间: 2024-10-15 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 357K
描述
P-Channel MOSFET

2KJ7115DFN 数据手册

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SMD Type  
MOSFET  
P-Channel MOSFET  
2KJ7115DFN  
PDFN3.3x3.3-8  
Top View  
Bottom View  
Features  
VDS  
-40 V  
ID  
(at VGS=-10V)  
-7.2 A  
RDS(ON) (at VGS = - 10V) < 25 mΩ  
RDS(ON) (at VGS = - 4.5V) < 45 mΩ  
Pin 1  
D
Top View  
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings (  
TA = 25unless otherwise noted.)  
Parameter  
Symbol  
Rating  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
V
V
DS  
GS  
-40  
±20  
-7.2  
-5.77  
-80  
T
A
=25℃  
=70℃  
Continuous Drain Current (Note 2)  
ID  
TA  
A
Pulsed Drain Current (Note 3)  
IDM  
Maximum Body Diode Forward Current (Note 2)  
Pulsed Source Current (Note 3)  
I
S
-7.2  
-80  
I
SM  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 2)  
0.81  
Power Dissipation  
P
D
W
/W  
1.95  
155  
64  
Thermal Resistance, Junction- to-Ambient  
RθJA  
Junction Temperature  
Storage Temperature Range  
Notes:  
T
J
150  
Tstg  
-55 to 150  
1. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
2. For a device surface mounted on 25mm x 25mm FR-4 PCB with 2oz copper, in still air conditions.  
3. Same as note 2, except the device is pulsed with D= 0.02 and pulse width 300µs.  
1
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